| Ident. | Authors (with country if any) | Title |
|---|
| 000360 |
| Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials |
| 000454 |
| Ordered versus random nucleation of InN islands grown by molecular beam epitaxy |
| 001299 |
| Structural properties of oxygen on InN(0001) surface |
| 001800 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy |
| 001A11 |
| First-principles study of indium on silicon (1 0 0): the structure, defects and interdiffusion |
| 001A54 |
| InN island shape and its dependence on growth condition of molecular-beam epitaxy |
| 001A66 |
| Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy |
| 001B86 |
| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells |
